Qualcomm, Inc. Snapdragon Mobile, Snapdragon Wear

CVE-2018-11982
HIGH 8.8

At a glance

Source
NVD
EPSS
EPSS 0.39 % · percentile 33 ()
State
PUBLISHED
Published
Updated
Assigner
qualcomm
NVD status
Modified

Description

In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.

Weaknesses (CWE)

References

Scores

VersionScoreVectorScored by
CVSS 3.0HIGH 8.8CVSS:3.0/AV:A/AC:L/PR:N/UI:N/S:U/C:H/I:H/A:HNVD · nvd@nist.gov (Primary)
CVSS 2.0HIGH 8.3AV:A/AC:L/Au:N/C:C/I:C/A:CNVD · nvd@nist.gov (Primary)

European references

Affected configurations (NVD CPE)

Affected products

ProductVersions
Qualcomm, Inc. · Snapdragon Mobile, Snapdragon Wearaffected MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016

Sources

SourceLicence
CVE List (CVEProject cvelistV5)CVE Program Terms of Use
EPSS (FIRST.org)FIRST — attribution requested
ENISA EUVDENISA — reproduction authorised, source acknowledged
NVD (NIST) via fkie-cad/nvd-json-data-feedsPublic domain — this product uses data from the NVD API but is not endorsed or certified by the NVD